Understanding the Chemistry behind Carrier Transport Properties of Bulk and Interfacial Regions in Solution-Deposited Films
Many standard physical and chemical characterization techniques are insensitive to low quantities of dopants and defects in solution-deposited thin films. However, electrical characterization (EC) is a powerful and sensitive method for probing these properties. The objective of this group is to use EC to understand how impurities or additives (counterions, condensation byproducts, metal dopants, etc.) affect bulk film chemistry and device interface properties. Therefore a complete suite of complementary electrical characterization techniques focused on elucidating bulk and interfacial chemistry will enhance our understanding of these functional films. This will be done in parallel with standard physical (TEM/SEM, SAXS, XRR/XRD) and chemical (IR, NMR, Raman) characterization techniques to create a complete picture of film structure and the roles of defects.
- High-K Lanthanum Zirconium Oxide Thin Films from Aqueous Solution
- Effect of Annealing Atmosphere on LaAlO3-gated TFT Devices
- Design and Characterization of Nanolaminates Containing Mobiles Species
- Transition metal alumina doped amorphous thin films from aqueous precursors
- Understanding the effects of local coordination and transition metal identity on the electronic structure of mixed transition metal-alumina amorphous thin films
- STM-Induced Luminescence of Zn-Doped Alumina Thin Films