Department of Chemistry and Chemical Biology
B.S., Haverford College, 1978.
Ph.D., University of California, Berkeley, 1983
The semiconductor industry critically needs new materials and structures to continue scaling transistors. Our research in this area is directed at understanding and controlling the atomic scale properties of future generation of MOS (metal-oxide-semiconductor) gate stacks (the core region of a transistor). This work involves a range of new materials for metal gate electrodes (with appropriate work functions), dielectrics (with a higher dielectric constant than HfO2), and semiconductors (including Ge and GaAs-based channels). Key factors in choosing alternative materials for MOS gate stacks are that the structure, once grown, should display a high capacitance and high on-off ratio, have a low concentration of electrical defects, be thermally stable, and be manufacturable in appropriate structures.
CSMC Research Thrusts